TLP4192G 2003-02-19 1 toshiba photocoupler photorelay TLP4192G telecommunication measurement equipment security equipment fa the toshiba TLP4192G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-mosfet in a sop package. this 1-form-b (nc) photorelay features a withstanding voltage of 350 v. 6-pin sop (2.54sop6): height = 2.1 mm, pitch = 2.54 mm normally closed (1-form-b) device peak off-state voltage: 350 v (min) trigger led current: 3 ma (max) on-state current: 90 ma (max) on-state resistance: 50 ? (max) isolation voltage: 1500 vrms (min) pin configuration (top view) schematic unit: mm jedec D jeita D toshiba 11-7c1 weight: 0.13 g (typ.) 1 3 6 4 1: anode 2: cathode 4: drain d1 5: source 6: drain d2 2 5 1 6 4 2 5
TLP4192G 2003-02-19 2 maximum ratings (ta 25c) characteristics symbol rating unit forward current i f 50 ma forward current derating (ta 25c) i f /c 0.5 ma/c peak forward current (100 s pulse, 100 pps) i fp 1 a reverse voltage v r 5 v led junction temperature t j 125 c off-state output terminal voltage v off 350 v a connection 90 b connection 90 on-state current c connection i on 180 ma a connection 0.9 b connection 0.9 on-state current derating (ta 25c) c connection i on /c 1.8 ma/c detector junction temperature t j 125 c storage temperature range t stg 55 to 125 c operating temperature range t opr 40 to 85 c lead soldering temperature (10 s) t sol 260 c isolation voltage (ac, 1 min, r.h. 60%) (note 1) bv s 1500 vrms note 1: pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. recommended operating conditions characteristics symbol min typ. max unit supply voltage v dd 280 v forward current i f 5 25 ma on-state current i on 90 ma operating temperature t opr 20 65 c circuit connections a connection b connection c connection 1 2 3 6 5 4 load ac or dc 1 2 3 6 5 4 load dc 1 2 3 6 5 4 load dc
TLP4192G 2003-02-19 3 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit forward voltage v f i f 10 ma 1.0 1.15 1.3 v reverse current i r v r 5 v 10 a led capacitance c t v 0, f 1 mhz 30 pf off-state current i off v off 350 v, i f 5 ma 1 a detecto r capacitance c off v 0, f 1 mhz, i f 5 ma 30 pf coupled electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit trigger led current i fc i off 10 a 1 3 ma return led current i ft i on 90 ma 0.1 ma a connection i on 90 ma 27 50 b connection i on 90 ma 20 43 on-state resistance c connection r on i on 180 ma 10 isolation characteristics (ta 25c) characteristics symbol test condition min typ. max unit capacitance input to output c s v s 0, f 1 mhz 0.8 pf isolation resistance r s v s 500 v, r.h. 60% 5 10 10 10 14 ac, 1 min 1500 ac, 1 s, in oil 3000 vrms isolation voltage bv s dc, 1 min, in oil 3000 vdc switching characteristics (ta 25c) characteristics symbol test condition min typ. max unit turn-on time t on 0.25 0.5 ms turn-off time t off r l 200 v dd 20 v, i f 5 ma (note 2) 0.5 1 ms note 2: switching time test circuit 6 t off t on 10% 90% v out i f 1 v dd v out r l 4 2 i f
TLP4192G 2003-02-19 4 ambient temperature ta (c) i f ? ta allowable forward current i f (ma) ambient temperature ta (c) i on ? ta allowable on-state current i on (ma) forward voltage v f (v) i f ? v f forward current i f (ma) 0 20 60 20 40 80 100 120 100 80 60 40 20 0 ta 25c 0.6 0.8 1 1.2 1.6 1.8 1.4 100 30 10 3 1 0.3 0.1 0 20 280 120 100 80 60 40 20 0 240 200 160 120 80 40 c connection a connection, b connection
TLP4192G 2003-02-19 5 ambient temperature ta (c) r on ? ta on-state resistance r on ( ) ambient temperature ta (c) i off ? ta off-state current i off (na) ambient temperature ta (c) i fc ? ta trigger led current i fc (ma) i on ? v on on-state current i on (ma) on-state voltage v on (v) switching time t on , t off ( s) input current i f (ma) t on , t off ? i f ambient temperature ta (c) t on , t off ? ta switching time t on , t off ( s) 10 40 3000 100 80 60 40 20 0 20 300 100 30 1000 t on t off v dd 20 v, r l 200 i f 5 ma 1 100 ta 25c v dd 20 v, r l 200 t on t off 30 50 10 3 5 300 10 3000 300 100 30 1000 ta 25c 4 1 0 4 1 150 150 50 0 100 50 100 2 3 2 3 i on 90 ma t 1 s 0 40 5 100 80 60 40 20 0 20 4 3 2 1 1 0 20 40 60 80 100 10 100 1000 3 30 300 v off 350 v i f 5 ma i on 90 ma t 1 s 40 0 20 0 20 40 80 100 60 20 30 50 40 10
TLP4192G 2003-02-19 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium (gaas) arsenide is a substance used in the products described in this document. gaas dust or vapor is harmful to the human body. do not break, cut, crushu or dissolve chemically. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 020704ebc restrictions on product use
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